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المبحث الثاني: حقيقة الشعر الحر

المبحث الثاني: حقيقة الشعر الحر

 بدأت الدعوۃ تنمو وتتسع حتی بدأت القصائد حرۃ الوزن تظھر في الساحۃ الأدبیۃ، وفي عام 1950م تم نشر أول دیوان للشاعر العراقي عبدالوھاب البیاتي بإسم (ملائکۃ وشیاطین)[1] وکان فیہ قصائد حرة الوزن۔

وظھر بعدہ (المساء الخیر) لشاذل طاقۃ ، ثم تلا ذلک (أساطیر) لبدر شاکر السیاب. ولکن ھناک الکثیر من الأدباء الکبار الذین أنکروا ھذہ الحرکۃ وتوقعوا لھا الھزیمۃ والفشل وأیضاً اعتقدوا بأن معانیھا غیر مبتکرۃ. وقد قال الشاعر عمران العمران[2]: "وذلک أن التجدید في الشعر لا یکون بالتنکر لقوانینہ إنما یکون الابتکار في المعاني، کما یکون في الإبداع بالأسلوب وفي استحداث الصور والأخیلۃ الملائمۃ لبيئة الشاعر وحیاتہ المعاصرۃ[3]، وقال أیضاً : "علی أي حال، فإن مایسمی بالشعر الحر یمثل الھزیمۃ الأدبیۃ للأمۃ العربیۃ وھی ھزیمۃ لا تقل بحال عن ھزائمنا السیاسیۃ والعسکریۃ"[4]، وقال أیضاً في موضع: "علی أن ما یسمی بالشعر الحر یمکن اعتبارہ من قبیل النثر، بمعنی أن الجید منہ یمثل وجھاً أدبیاً، بل فکراً عربیاً، أما الرديء فإنہ یدخل في باب الکلام العادي الذي لا یختلف عن کلام السوقۃ والعوام، وقد ینتظم بعضہ مفھوم الھذر في أحیان کثیرۃ"[5]۔



[1] الملائکۃ، نازک، قضایا الشعر المعاصر، سبق ذکرہ، ص 37

[2] عمران محمد العمران، الأستاذ الأدیب الشاعر والناثر السعودي فلہُ مشارکات ثقافیۃ وأعمال أدبیۃ 
ونثریۃ۔

[3] العمران ، عمران بن محمد، ھوامش أدیبۃ(الطبعۃ الأولی، 1992م) بدون مکان النشر، ص17۰۔

Fasting Gastric Acidity Evidential Effect on Esophageal Mucosal Damage

Gastric substances that potentially increase the esophageal mucosal damage are: gastric acid, pepsin, bile salts, and pancreatic enzymes. From all of these substances, the highest potential for reflux damage is gastric acid. Although the main cause of clinical symptoms of GERD is acid reflux, it has been known that there are subgroups with typical reflux symptoms that do not provide sufficient response or not responsive to PPI treatment. Despite the improvement of esophagitis, there is no clinical improvements in reflux symptoms of 30% respondents. Therefore, this study was designed to determine fasting gastric acidity with endoscopic findings in patients with GERD. A comparative-analysis study, which determine the fasting gastric acidity from endoscopic findings in patients with GERD. Samples recruited using consecutives sampling technique and divided into groups of esophagitis and non-esophagitis reflux. A total of 40 samples involved in this study. The Mann-Whitney test, was used for analyzing the difference between fasting gastric acidity from endoscopic findings of esophagitis lesions in patient with GERD. The median value for fasting gastric acidity in the esophagitis reflux group was 1.88 (0.82-4.84), whereas the median value for fasting gastric acidity in the non-esophagitis reflux group was 2.49 (0.68-5.97). The Mann-Whitney test result was p=0.298 (p>0.05). This study shows that there is no significant difference of fasting gastric acidity from endoscopic findings between esophagitis and non esophagitis reflux groups in patients with gastroesophageal reflux disease (GERD). This study shows that esophagitis lesions are not affected by gastric acidity.

Next Generation Energy Efficient Process Protocols in Si-Cmos Electronics

As Silicon CMOS manufacturing industry is possibly reaching to its climax with complex requirements posed by the International Technology Roadmap of Semiconductors; a “More Moore” approach is fully utilized to further exploit the Silicon Fabrication protocols. This goes hand in hand with other two process and design strategies, namely, “More than Moore” and “Beyond CMOS”. A 10 node technology, converging the chip fabrication processes between 10nm and 20nm, has been rigorously tested and revisited to look for complimentary solutions which are exploitable in variety of designs and processes in next generation technology nodes. The operational output characteristics of MOS/CMOS and its variant devices are being reassessed with a perspective of energy efficiency gained during the device design (inclusive of scaling requirements) and process development. This, in turn, influences the power consumption, proficiency of performance and reliability of the devices. Such energy efficient electronics has gained a huge interest due the evolution of Internet of Things (IoT) and its ultra-low power considerations. This study focuses on the energy efficient design and fabrication of Silicon CMOS/MOSCAP devices with a detailed electrical and electro-optical metrology. A FAB-specific MOSFET design (technology file), simulated output characteristics, half-of-FAB line processing of MOSCAP structure with integration of novel Atomic Layer Deposited TiN/HfSiOx metal gate/High-k stack and atomistic-layered PVD-driven Aluminium back-contact metallization is realized in this work. Energy efficiency is also studied through the concept of thermal budget by virtue of the dynamics of annealing which greatly influence the electrical properties of the gate stack and consequently the reliability of the process. Subsequent process characterization is performed using Current-Voltage, Capacitance-Voltage, Current Density, Leakage Resistance, Built-in Voltage, Doping Profiling, Charge-storage/ Permittivity, Hall Effect and Vertical Field analysis. Sophisticated metrology techniques such as Charge-Deep Level Transient Spectroscopy and Spectroscopic Ellipsometry are utilized to extract and evaluate the hypersensitive electrical and electro-optical parameters such as charge-transient behavior, activation energy, trap density, capture cross-section, refractive index, dielectric and extinction coefficients etc. Design verification through FAB-line processing, post-FAB thermal processing and variety of measurements revealed a number of interesting results which altogether provide a novel process window to engineer energy efficient electronics with a better trade-off. These results may have ramifications for device and process engineer.
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